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ksd-t0o018-000 1 SMK1060PS advanced n-ch power mosfet s s e e m m i i c c o o n n d d u u c c t t o o r r g d pin connection g d s to-220ab-3l s switching regulato r applications features ? high voltage: bv dss =600v(min.) ? low c rss : c rss =18pf(typ.) ? low gate charge : qg=35nc(typ.) ? low r ds(on) :r ds(on) =0.75 (max.) ordering information absolute maximum ratings (t c =25 c unless otherwise noted) characteristic symbol rating unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v (tc=25 ) 10 a drain current (dc) * i d (tc=100 ) 6.32 a drain current (pulsed) * i dm 40 a drain power di ssipation p d 120 w avalanche current (single) i as 10 a single pulsed aval anche energy e as 490 mj avalanche current (repetitive) i ar 10 a repetitive avalanche energy e ar 11.6 mj junction temperature t j 150 storage temperature range t stg -55~150 c * limited by maximum junction temperature characteristic symbol typ. max unit junction-case r th(j-c) - 1.04 thermal resistance junction-ambient r th(j-a) - 62.5 /w type no. marking package code SMK1060PS smk1060 to-220ab-3l
ksd-t0o018-000 2 SMK1060PS electrical characteristics ( t c =25 c unless otherwise noted) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss i d =250 a, v gs =0 600 - - v gate threshold voltage v gs(th) i d =250 a, v ds = v gs 2.0 - 4.0 v drain-source cut-off current i dss v ds =600v, v gs =0v - - 1 a gate leakage current i gss v ds =0v, v gs = 30v - - 100 na drain-source on-resistance r ds(on) v gs =10v, i d =5.0a - 0.60 0.75 forward transfer conductance g fs v ds =10v, i d =5.0a - 8.0 - s input capacitance ciss - 2000 2350 output capacitance coss - 160 215 reverse transfer capacitance crss v gs =0v, v ds =25v f=1mhz - 18 - pf tu r n - o n de l ay t i m e t d(on) - 23 - rise time t r - 69 - turn-off delay time t d(off) - 144 - fall time t f v dd =300v, i d =10a r g =25 ? - 77 - ns total gate charge q g - 35 57 gate-source charge q gs - 9.0 - gate-drain charge q gd v ds =480v, v gs =10v i d =10a - 10 - nc source-drain diode ratings and characteristics ( t c =25 c unless otherwise noted) characteristic symbol test condition min typ max unit source current (dc) i s - - 10 source current (pulsed) i sm integral reverse diode in the mosfet - - 40 a forward voltage v sd v gs =0v, i s =10a - - 1.4 v reverse recovery time t rr - 470 - ns reverse recovery charge q rr i s =10a, v gs =0, di s /dt=100a/ us - 6 - uc note ; repetitive rating : pulse width limited by maximum junction temperature l=10mh, i as =9.5a, v dd =50v, r g =25 ? , starting t j = 25 pulse test : pulse width 300us, duty cycle 2% essentially independent of operating temperature
ksd-t0o018-000 3 SMK1060PS electrical characteristic curves - fig. 1 i d - v ds fig. 4 i s - v sd fig. 3 r ds ( on ) - i d fig.6 v gs - q g fig. 2 i d - v gs fig. 5 capacitance - v ds
ksd-t0o018-000 4 SMK1060PS c c * fig.8 r ds(on) - t j fig. 9 i d - t c fig. 7 v dss - t j fig. 10 safe operating area electrical characteristic curves
ksd-t0o018-000 5 SMK1060PS fig. 10 gate charge test circuit & waveform fig. 11 resistive switching test circuit & waveform fig. 12 e as test circuit & waveform
ksd-t0o018-000 6 SMK1060PS fig. 13 diode reverse recovery time test circuit & waveform
ksd-t0o018-000 7 SMK1060PS outline dimension
ksd-t0o018-000 8 SMK1060PS the auk corp. products are intended for the use as components in general electronic equipment (office and co mmunication equipment, m easuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to th e welfare of human life(atomi c energy control, airplane, spaceship, transportation, co mbustion control, all types of safety device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equi pments without prior consultation with auk corp.. specifications mentioned in this publicati on are subject to change without notice.
ksd-t0o035-000 1 smk0870f advanced power mosfet s s e e m m i i c c o o n n d d u u c c t t o o r r switching regulato r applications features ? high voltage: bv dss =700v(min.) ? low c rss : c rss =13.7pf(typ.) ? low gate charge : qg=32nc(typ.) ? low r ds(on) :r ds(on) =0.9 (max.) ordering information type no. marking package code smk0870f smk0870 to-220f-3l pin connections 1. gate 2. drain 3. source g d s
ksd-t0o035-000 2 smk0870f absolute maximum ratings (tc=25 c) characteristic symbol rating unit drain-source voltage v dss 700 v gate-source voltage v gss 30 v (tc=25 ) 8 a drain current (dc) * i d (tc=100 ) 4.8 a drain current (pulsed) * i dm 32 a drain power di ssipation p d 40 w avalanche current (single) i as 8 a single pulsed aval anche energy e as 266 mj avalanche current (repetitive) i ar 8 a repetitive avalanche energy e ar 11.6 mj junction temperature t j 150 storage temperature range t stg -55~150 c * limited by maximum junction temperature characteristic symbol typ. max unit junction-case r th(j-c) - 3.1 thermal resistance junction-ambient r th(j-a) - 62.5 /w
ksd-t0o035-000 3 smk0870f electrical characteristics (tc=25 c) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss i d =250 a, v gs =0 700 - - v gate threshold voltage v gs(th) i d =250 a, v ds = v gs 2.0 - 4.0 v drain-source cut-off current i dss v ds =700v, v gs =0v - - 1 a gate leakage current i gss v ds =0v, v gs = 30v - - 100 na drain-source on-resistance r ds(on) v gs =10v, i d =4.0a - 0.77 0.90 forward transfer conductance g fs v ds =10v, i d =4.0a - 11 - s input capacitance ciss - 2006 2507 output capacitance coss - 148 185 reverse transfer capacitance crss v gs =0v, v ds =25v f=1mhz - 13.7 17.1 pf tu r n - o n de l ay t i m e t d(on) - 23 - rise time t r - 69 - turn-off delay time t d(off) - 144 - fall time t f v dd =300v, i d =10a r g =25 ? - 77 - ns total gate charge q g - 32 40 gate-source charge q gs - 9 - gate-drain charge q gd v ds =560v, v gs =10v i d =8a - 8 - nc source-drain diode ratings and characteristics (tc=25 c) characteristic symbol test condition min typ max unit source current (dc) i s - - 8 source current (pulsed) i sm integral reverse diode in the mosfet - - 32 a forward voltage v sd v gs =0v, i s =8a - - 1.4 v reverse recovery time t rr - 420 - ns reverse recovery charge q rr i s =8a, v gs =0, di s /dt=100a/ us - 4.2 - uc note ; repetitive rating : pulse width limited by maximum junction temperature l=7.74mh, i as =8a, v dd =50v, r g =25 ? , starting t j = 25 pulse test : pulse width 300us, duty cycle 2% essentially independent of operating temperature
ksd-t0o035-000 4 smk0870f electrical characteristic curves - fig. 1 i d - v ds fig. 4 i s - v sd fig. 3 r ds ( on ) - i d fig.6 v gs - q g fig. 2 i d - v gs fig. 5 capacitance - v ds
ksd-t0o035-000 5 smk0870f c c * fig.8 r ds(on) - t j fig. 9 i d - t c fig. 7 v dss - t j fig. 10 safe operating area electrical characteristic curves
ksd-t0o035-000 6 smk0870f fig. 10 gate charge test circuit & waveform fig. 11 resistive switching test circuit & waveform fig. 12 e as test circuit & waveform
ksd-t0o035-000 7 smk0870f fig. 13 diode reverse recovery time test circuit & waveform
ksd-t0o035-000 8 smk0870f outline dimensions
ksd-t0o035-000 9 smk0870f the auk corp. products are intended for the use as components in general electronic equipment (office and co mmunication equipment, m easuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to th e welfare of human life(atomi c energy control, airplane, spaceship, transportation, co mbustion control, all types of safety device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equi pments without prior consultation with auk corp.. specifications mentioned in this publicati on are subject to change without notice.
ksd-t0o033-000 1 smk0965f advanced power mosfet s s e e m m i i c c o o n n d d u u c c t t o o r r switching regulato r applications features ? high voltage: bv dss =650v(min.) ? low c rss : c rss =16pf(typ.) ? low gate charge : qg=35nc(typ.) ? low r ds(on) :r ds(on) =0.85 (max.) ordering information type no. marking package code smk0965f smk0965 to-220f-3l pin connections 1. gate 2. drain 3. source g d s
ksd-t0o033-000 2 smk0965f absolute maximum ratings (tc=25 c) characteristic symbol rating unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v (tc=25 ) 9 a drain current (dc) * i d (tc=100 ) 5.5 a drain current (pulsed) * i dm 36 a drain power di ssipation p d 40 w avalanche current (single) i as 9 a single pulsed aval anche energy e as 250 mj avalanche current (repetitive) i ar 9 a repetitive avalanche energy e ar 11.6 mj junction temperature t j 150 storage temperature range t stg -55~150 c * limited by maximum junction temperature characteristic symbol typ. max unit junction-case r th(j-c) - 3.1 thermal resistance junction-ambient r th(j-a) - 62.5 /w
ksd-t0o033-000 3 smk0965f electrical characteristics (tc=25 c) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss i d =250 a, v gs =0 650 - - v gate threshold voltage v gs(th) i d =250 a, v ds = v gs 2.0 - 4.0 v drain-source cut-off current i dss v ds =650v, v gs =0v - - 1 a gate leakage current i gss v ds =0v, v gs = 30v - - 100 na drain-source on-resistance r ds(on) v gs =10v, i d =4.5a - 0.72 0.85 forward transfer conductance g fs v ds =10v, i d =4.5a - 11 - s input capacitance ciss - 2040 2550 output capacitance coss - 153 192 reverse transfer capacitance crss v gs =0v, v ds =25v f=1mhz - 16 20 pf tu r n - o n de l ay t i m e t d(on) - 23 - rise time t r - 69 - turn-off delay time t d(off) - 144 - fall time t f v dd =300v, i d =9.0a r g =25 ? - 77 - ns total gate charge q g - 35 57 gate-source charge q gs - 10 - gate-drain charge q gd v ds =520v, v gs =10v i d =9.0a - 9.0 - nc source-drain diode ratings and characteristics (tc=25 c) characteristic symbol test condition min typ max unit source current (dc) i s - - 9 source current (pulsed) i sm integral reverse diode in the mosfet - - 36 a forward voltage v sd v gs =0v, i s =9.0a - - 1.4 v reverse recovery time t rr - 420 - ns reverse recovery charge q rr i s =9.0a, v gs =0, di s /dt=100a/ us - 4.2 - uc note ; repetitive rating : pulse width limited by maximum junction temperature l=5.7mh, i as =9a, v dd =50v, r g =25 ? , starting t j = 25 pulse test : pulse width 300us, duty cycle 2% essentially independent of operating temperature
ksd-t0o033-000 4 smk0965f electrical characteristic curves - fig. 1 i d - v ds fig. 4 i s - v sd fig. 3 r ds ( on ) - i d fig.6 v gs - q g fig. 2 i d - v gs fig. 5 capacitance - v ds
ksd-t0o033-000 5 smk0965f c c * fig.8 r ds(on) - t j fig. 9 i d - t c fig. 7 v dss - t j fig. 10 safe operating area electrical characteristic curves
ksd-t0o033-000 6 smk0965f fig. 10 gate charge test circuit & waveform fig. 11 resistive switching test circuit & waveform fig. 12 e as test circuit & waveform
ksd-t0o033-000 7 smk0965f fig. 13 diode reverse recovery time test circuit & waveform
ksd-t0o033-000 8 smk0965f outline dimensions
ksd-t0o033-000 9 smk0965f the auk corp. products are intended for the use as components in general electronic equipment (office and co mmunication equipment, m easuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to th e welfare of human life(atomi c energy control, airplane, spaceship, transportation, co mbustion control, all types of safety device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equi pments without prior consultation with auk corp.. specifications mentioned in this publicati on are subject to change without notice.
ksd-t0o030-001 1 smk1060f advanced n-ch power mosfet s s e e m m i i c c o o n n d d u u c c t t o o r r g d pin connection g d s to-220f-3l s switching regulato r applications features ? high voltage: bv dss =600v(min.) ? low c rss : c rss =18pf(typ.) ? low gate charge : qg=35nc(typ.) ? low r ds(on) :r ds(on) =0.75 (max.) ordering information absolute maximum ratings (t c =25 c unless otherwise noted) characteristic symbol rating unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v (tc=25 ) 10 a drain current (dc) * i d (tc=100 ) 5.8 a drain current (pulsed) * i dm 38 a drain power di ssipation p d 40 w avalanche current (single) i as 10 a single pulsed aval anche energy e as 490 mj avalanche current (repetitive) i ar 10 a repetitive avalanche energy e ar 11.6 mj junction temperature t j 150 storage temperature range t stg -55~150 c * limited by maximum junction temperature characteristic symbol typ. max unit junction-case r th(j-c) - 3.1 thermal resistance junction-ambient r th(j-a) - 62.5 /w type no. marking package code smk1060f smk1060 to-220f-3l
ksd-t0o030-001 2 smk1060f electrical characteristics ( t c =25 c unless otherwise noted) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss i d =250 a, v gs =0 600 - - v gate threshold voltage v gs(th) i d =250 a, v ds = v gs 2.0 - 4.0 v drain-source cut-off current i dss v ds =600v, v gs =0v - - 1 a gate leakage current i gss v ds =0v, v gs = 30v - - 100 na drain-source on-resistance r ds(on) v gs =10v, i d =5.0a - 0.60 0.75 forward transfer conductance g fs v ds =10v, i d =5.0a - 8.0 - s input capacitance ciss - 2000 2350 output capacitance coss - 160 215 reverse transfer capacitance crss v gs =0v, v ds =25v f=1mhz - 18 - pf tu r n - o n de l ay t i m e t d(on) - 23 - rise time t r - 69 - turn-off delay time t d(off) - 144 - fall time t f v dd =300v, i d =10a r g =25 ? - 77 - ns total gate charge q g - 35 57 gate-source charge q gs - 9.0 - gate-drain charge q gd v ds =480v, v gs =10v i d =10a - 10 - nc source-drain diode ratings and characteristics ( t c =25 c unless otherwise noted) characteristic symbol test condition min typ max unit source current (dc) i s - - 10 source current (pulsed) i sm integral reverse diode in the mosfet - - 40 a forward voltage v sd v gs =0v, i s =10a - - 1.4 v reverse recovery time t rr - 470 - ns reverse recovery charge q rr i s =10a, v gs =0, di s /dt=100a/ us - 6 - uc note ; repetitive rating : pulse width limited by maximum junction temperature l=10mh, i as =9.5a, v dd =50v, r g =25 ? , starting t j = 25 pulse test : pulse width 300us, duty cycle 2% essentially independent of operating temperature
ksd-t0o030-001 3 smk1060f electrical characteristic curves - fig. 1 i d - v ds fig. 4 i s - v sd fig. 3 r ds ( on ) - i d fig.6 v gs - q g fig. 2 i d - v gs fig. 5 capacitance - v ds
ksd-t0o030-001 4 smk1060f c c * fig.8 r ds(on) - t j fig. 9 i d - t c fig. 7 v dss - t j fig. 10 safe operating area electrical characteristic curves
ksd-t0o030-001 5 smk1060f fig. 10 gate charge test circuit & waveform fig. 11 resistive switching test circuit & waveform fig. 12 e as test circuit & waveform
ksd-t0o030-001 6 smk1060f fig. 13 diode reverse recovery time test circuit & waveform
ksd-t0o030-001 7 smk1060f
ksd-t0o030-001 8 smk1060f the auk corp. products are intended for the use as components in general electronic equipment (office and co mmunication equipment, m easuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to th e welfare of human life(atomi c energy control, airplane, spaceship, transportation, co mbustion control, all types of safety device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equi pments without prior consultation with auk corp.. specifications mentioned in this publicati on are subject to change without notice.

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